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Polarity Change of Threshold Voltage Shifts for N-Channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias

C. -F. Huang,Y. -J. Yang,C. -Y. Peng,H. -C. Sun,C. W. Liu,Y. -C. Hsu,C. -C. Shih, J. -S. Chen

SIGE, GE, AND RELATED COMPOUNDS 3 MATERIALS, PROCESSING, AND DEVICES（2008）

Cited 2|Views3
Key words
Thin-Film Transistors,Double-Gate Transistors,Tunnel Field-Effect Transistors
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