X-Ray Diffraction Analysis of Damage and Doping Effects in Low-Dose, High-Energy Implanted Silicon

High-Resolution X-Ray Diffraction is investigated as a technique for analysis of low-dose, high-energy implanted (001) silicon. The choice of the proper Bragg reflection for the rocking curve measurements is showed to be of crucial importance. The (026)1 reflection appears to be the most suitable for strain caused by implantation damage. By a qualitative analysis of rocking curves taken on B and P implanted Si samples, it could be established that the minimum dose, for which HR-XRD is sensitive enough, is about 1.5•1014cm-2 and 5•1013cm-2 for P and B, respectively. The necessary minimum peak temperature that was determined for a complete damage anneal with the T-RTA of P implanted Si with energies ranging from 0.5 to 1.5 MeV, was 1400 K for all doses of P considered. For B the required optimum peak temperature is about 1375 K.