(Invited) Self-Aligned Bottom-Gate InGaZnO Thin-Film Transistor with Source and Drain Regions Formed by Selective Deposition of Fluorinated SiNx Passivation

A novel doping method of fluorine in IGZO for making thermally stable source and drain (S/D) regions of self-aligned oxide TFTs is presented. Thermally stable IGZO homo-junction could be achieved by the selective deposition of fluorinated silicon nitride (SiNx:F) on top of the IGZO. Electrical properties of self-aligned IGZO TFT drastically improved owing to the reduction of parasitic and offset resistances in S/D regions, and the field effect mobility of 10.6 cm2×V-1×s-1 was achieved. The proposed method is an essential for making self-aligned oxide TFTs with thermally stable S/D regions.