Repetition Rate And Wavelength Tuning Of Monolithic 40 Ghz Mode-Locked Lasers Based On Inp
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS(2003)
Abstract
The repetition rate and wavelength tuning behaviour of monolithically integrated 40 GHz mode-locked lasers based on GaInAsP/InP for passive and hybrid mode-locking have been investigated experimentally. Large repetition rate shifts (greater than or equal to 500 MHZ) and locking bandwidths (100...500 MHz) are demonstrated by only changing the dc gain and absorber bias conditions. Simultaneously, the width of the 2 ps pulses and low timing jitter values (< 300 fs) are kept almost unchanged. A pronounced influence of wavelength tuning on other pulse characteristics and repetition rate tuning is not observable. The achieved tuning ranges are discussed in relation to existing fabrication tolerances.
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Key words
frequency,gallium arsenide,optical waveguides,semiconductor lasers
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