Simulation of piezoelectric and spontaneous polarization effect on the InGaN/Si tandem solar cell

It is well known that nitride-based structures contain the polarization effects. In this paper, the effects of polarization on the photovoltaic characteristics of Si/InGaN tandem solar cells have been analyzed by using the One Dimensional Poisson, Drift-Diffusion, and Schrodinger Solver (1D-DDCC) simulator; the simulations show an improvement in the open-circuit voltage (V-oc), and the short-circuit current density (J(sc)) for a cell grown along the non-polar m-plane (1 (1) over bar 00) (without polarization) as compared to that grown along the polar c-plane (0001) (with polarization). (C) 2015 Elsevier GmbH. All rights reserved.