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Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

A Harada, H Yamaoka, R Ogata, K Watanabe,Kentaro Kinoshita,S Kishida,Toshiki Nokami, Toshihide Itoh

JOURNAL OF MATERIALS CHEMISTRY C（2015）

Cited 14|Views9
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Abstract
Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm of H2O, on the HfO2 film in the conducting-bridge random access memory composed of Cu/HfO2/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.
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Key words
ionic liquid,electrolyte,voltage,cb-ram
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