Low temperature buffer growth for the development of vertical light emitting diodes
Proceedings of SPIE(2009)
摘要
One key challenge with the the use of III-nitride materials in solid state lighting devices is the use
on thermally and/or electrically insulating substrates. In order to transition the lift-off tehniques from laserbased
processing to more benign chemical techniques, it is essential to realize the integration of chemical
soluble layers into the LED-growth process. This work presents the comparison of physical and chemical
vapor deposition techniques used in the growth of ZnO, one such possible isostructural buffer layer and a
comparison of the materials properties of samples grown by low temperature chemical vapor deposition
and pulsed laser deposition. The quality of the films was highly dependent on the growth conditions and
substrate preparation. For room temperature depostion, amorphous ZnO films were observed, while
completely oriented films were observed for 750°C growth. Pulsed chemical vapor deposition of the films
at 175°C showed smoother polycrystalline films with c-axis texture. ZnO films were etched at room
temperature demonstrating the suitability for chemical liftoff.
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关键词
solid state lighting,zinc oxide,chemicals,material properties,chemical vapor deposition,pulsed laser deposition,light emitting diode,light emitting diodes,room temperature
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