Reproducing Power Hysteresis With Circuit Envelope Simulation
2013 IEEE INTERNATIONAL RF AND MICROWAVE CONFERENCE (RFM)(2013)
Abstract
Power collapse and related hysteresis have been observed for pHEMT switch in its on state when the input power is swept in a certain power range. The abnormal high power behavior can be explained in terms of self-heating and the temperature dependence of the device performance. By incorporating self-heating and temperature dependence into a simplified model, power collapse is reproduced in harmonic balance simulation. A novel simulation scheme is then proposed to simulate the power hysteresis. By representing the power sweep in the measurement with a time-varying power source, the power hysteresis has been successfully reproduced in circuit envelope simulation.
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Key words
Circuit simulation,device model,HEMT,hysteresis,switch
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