Exchange of Bonded Hydrogen in Amorphous Silicon by Deuterium

Abeles B., Yang L., Leta D. P.,Majkrzak C.

MRS Online Proceedings Library（2011）

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摘要

We show that bonded hydrogen in a-Si:H is readily exchanged by atomic deuterium when exposed to a deuterium plasma discharge. The effective diffusion coefficient for the D.H exchange, 10∼14 cnr/sec at 160°C, is comparable to that of interstitial hydrogen in c-Si.

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关键词

chemical reaction,diffusion,layers,semimetals,deuterium,nonmetals,diffusion coefficient,stable isotope,silicon,elements,materials science,chemical reactions,hydrogen,isotopes

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