Advanced Positive Photoresists For Practical Deep-Uv Lithography

N Munzel,H Holzwarth,P Falcigno,Ht Schacht, R Schulz,O Nalamasu,Ag Timko,E Reichmanis, J Kometani, Dr Stone,Tx Neenan,Sg Slater, Md Frey,A Blakeney

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XI（1994）

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Abstract

New positive tone deep UV resists with enhanced post-exposure delay (PED) latitude and process latitude are presented. Additives and functionalized sulfone terpolymers are tailored to optimize the dissolution properties and process stability. Adjustment of the dissolution rate is used as a design criterion for optimizing the resist performance. RX 165 resist, optimized using the above criteria, exhibits 0.25 micron line/space resolution, 0.8 micrometers focus latitude at 0.275 micrometers resolution, and 1 hour post exposure delay latitude.

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lithography

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