Annealing Effects On The Structural And Electrical Properties Of Pulsed Laser Deposited Bapbo3 Thin Films

Conductive pervoskite BaPbO3 (BPO) films as potential electrodes for ferroelectric / tuneable applications were prepared by pulsed laser deposition technique at 600 degrees C and at 0.1 mbar oxygen partial pressure on fused silica substrates. The structural and electrical properties of the films showed a dependence on annealing temperatures and the high oxygen ambient. XRD and standard four probe method with Hall setup were employed to investigate the dependence of growth conditions on crystal structure, resistivity and the carrier concentration on annealing the BPO thin films. The surface topography was analysed by AFM. The unannealed as deposited films showed the least resistivity of 1.6 x 10(-2) ohm cm and a bandgap of 4.1eV.