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Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography

ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXVII, PTS 1 AND 2(2010)

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Abstract
Photoacid generators (PAGs) are a key component in chemically amplified resists used in photolithography. Perfluorooctanesulfonates (PFOS) and other perfluoroalkylsulfonates (PFAS) have been well adopted as PAGs in 193 nm photoresist. Recently, concerns have been raised about their environmental impact due to their chemical persistency, bioaccumulation and toxicity. It is a general interest to find environmentally benign PAGs that are free of fluorine atoms. Here we describe the design, synthesis and characterization of a series of novel fluorine-free onium salts as PAGs for 193 nm photoresists. These PAGs demonstrated desirable physical and lithography properties when compared with PFAS-based PAGs for both dry and immersion exposures.
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Key words
Photoacid generators,193 nm lithography,fluorine-free
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