Algan/Gan Heterostructure Field-Effect Transistor with Semi-Insulating Mg-Doped Gan Cap Layer K. H. Lee,P. C. Chang,S. J. ChangECS SOLID STATE LETTERS(2012)引用 2|浏览2AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要