Silicon Superlattice on SOI for High Mobility and Reduced Leakage

R J Mears,Marek Hytha,Ilija Dukovski,A Yiptong,Xiangyang Huang,Samed Halilov, A Broka,Robert John Stephenson, Vivek Rao, D R Webb, R Prasad,Scott A Kreps,Hideki Takeuchi, Shigeru Ikeda,G Gebara, K Matthews,Jeff Wetzel, Wade Xiong, C R Bowen,Rick L Wise,C R Cleavelin

2007 IEEE International SOI Conference（2007）

Cited 10|Views23

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Abstract

In this paper, simultaneous NMOS drive current enhancement and gate leakage reduction via a novel silicon superlattice on SOI high mobility channel replacement layer is demonstrated. The technology, which is termed MST-SOI, has demonstrated in excess of 20% mobility enhancement, up to 30% drive current enhancement and significant gate leakage reduction compared to a baseline SOI process.

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Key words

silicon superlattice,SOI,NMOS drive current enhancement,gate leakage reduction,high mobility channel replacement layer,MST-SOI technology,mobility enhancement,Si-SiO2

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