Inp Double Heterojunction Bipolar Transistor Linear-Efficient Power Amplifiers

Excellent linear efficiency has been demonstrated with InP double heterojunction bipolar transistors (DRBTs) being developed for military and commercial applications under an Air Force Dual-Use Science and Technology (AF DUS&T) program. The 1.95 GHz to 28 GHz operating frequencies address applications from commercial wireless communication up through Local Multipoint Distribution Services systems. Excellent carrier to third-order intermodulation (C/IM3) ratios have also been measured simultaneously with high power-added efficiency (PAE) on InP DHBT circuits. This linear-efficient performance Is due, in part, to the InP DHBT's improved breakdown voltage, improved cut-off frequency and the reduced offset voltage resulting from the double heterojunction and InP collector.