New Vdmos Structure With Discontinuous Thick Inter-Body Oxide To Reduce Gate-To-Drain Charge

A new vertical power MOSFET (VDMOS) structure with a Discontinuous Thick Inter-Body Oxide (DTIBO) is presented and experimentally analyzed in this paper. The new structure substantially reduces the Qgd*sRon figure-of-merit without excessive BVds penalization with respect to the conventional VDMOS. Moreover, the undesired hot-carried injection (HCI) effects are also assessed.