A-Sige : H Materials And Devices Deposited By Hot Wire Cvd Using A Tantalum Filament Operated At Low Temperature

Ah Mahan, Y Xu, Lm Gedvilas,Rc Reedy,Dl Williamson, S Datta, Jd Cohen, B Yan,Hm Branz

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005（2005）

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摘要

We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the Hot Wire CVD (HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the aSiGe:H films by comparing infrared, small angle x-ray scattering (SAXS), photocapacitance and conductivity measurements to earlier results, and fabricate single junction n-i-p solar cell devices using these i-layers.

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关键词

hydrogen,scattering,infrared spectra,solar energy,deposition,electrical conductivity,materials science,silicon,infrared,chemical vapour deposition,germanium,small angle x ray scattering

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