Mechanism of radiation effects in floating gate ROMs
ACTA PHYSICA SINICA(2003)
摘要
Mechanism of irradiation effects is analyzed for floating gate read only memories (ROMs). Phenomena in experiments are reasonably explained. It is proposed that failures in devices result from oxide trapped charge and interface trapped charge generated by radiation in memory cells and peripheral circuitry. The neutron, proton and Co-60 gamma irradiation effects in FLASH ROM and EEPROM are total dose effects.
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关键词
neutron,proton,eeprom
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