Characterization of Microcrystalline Transition from Amorphous Silicon as a Function of Hydrogen Dilution and Substrate Temperature of Hot-wire CVD
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002（2011）
Abstract
a-Si:H films were prepared by hot wire chemical vapor deposition. One group was deposited at a substrate temperature of T s =250°C with varied hydrogen-dilution ratio, 0More
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Key words
amorphous silicon,microcrystalline transition,substrate temperature,hot-wire
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