Gamma radiation-enhanced thermal diffusion of iron ions into II-VI semiconductor crystals

We investigate the effect of gamma-irradiation on the rate of post-growth thermal diffusion of iron into ZnSe and ZnS. Samples had thin films of iron deposited on one facet and were annealed at 950 degrees C for 14 days in the presence of gamma-radiation and diffusion lengths were compared to those of traditional post-growth thermal diffusion in the absence of gamma-irradiation. Samples of Fe:ZnSe and Fe:ZnS annealed under 44R/s gamma-irradiation showed increases in diffusion rate of 14% and 50%, respectively. (C)2015 Optical Society of America