A Simple And Effective Carrier Lifetime Evaluation Method With Diode Test Structures In Igbt
ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS(1997)
摘要
A simple and effective method of evaluating the carrier lifetime of a power device chip is proposed. In this method, Test Element Groups (TEGs) of diodes fabricated in the periphery of an Insulated Gate Bipolar Transistor (IGBT) chip were used as carrier lifetime monitors of IGBT's n(-) layer. The measured forward voltage drops (V-f) of the diode-TEGs were compared with simulated V-f and the lifetime was determined from the lifetime parameter of simulations. The estimated lifetime value was verified by the reverse recovery current characteristic.
更多查看译文
关键词
chip,diodes,carrier lifetime,cathodes,insulated gate bipolar transistor,igbt
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要