Improvement of Vertical Diode Properties by N‐type Plasma Doping for Low‐Power Phase Change Non‐Volatile Memory (NVM)

Using PH3 N‐type plasma doing (PLAD), the device characteristics of high performance vertical switch diode for 50 nm phase‐change NVM have been studied. Compared to the conventional beam line ion implantation, there are improvements of diode breakdown voltage (B.V.) and isolation B.V., respectively 20% and 41% by N‐type PLAD doping due to the higher doping level and shallower profile in N+ region. It also shows excellent off‐leakage properties less than 10 pA/cell without decreasing the Ion. From the results of this study, N‐type PLAD has been demonstrated to be effective for vertical diode electrical properties as well as for high productivity.