MOCVD growth long wavelength InGaAs QW (QDs) and GaInNAs QW on the GaAs substrate by using of TBAs and uDMHy sources

IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting（2000）

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摘要

High quality InGaAs QW (QD) and InGaAsN with RTPL emission around 1.2 mum-1.3 mum have been grown on GaAs substrate by MOCVD using of TBAs and uDMHy. The material growth and characteristics are investigated.

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关键词

mocvd,hydrogen,photoluminescence,infrared spectra,large hadron collider,gallium arsenide

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