Design of high efficient dual-band Si near-infrared detectors
2015 International Conference on Optical MEMS and Nanophotonics (OMN)（2015）
Abstract
A new plasmonic grating structure is proposed to implement Si near-infrared photodiodes through plasmon-induced hot carrier injection. The power conversion efficiencies (photon-to-plasmon) are near 70% and 90% at the wavelength of 851nm and 1305nm, respectively.
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Key words
high efficient dual-band Si near-infrared detectors,plasmonic grating structure,near-infrared photodiodes,plasmon-induced hot carrier injection,power conversion,photon-to-plasmon,wavelength 851 nm,wavelength 1305 nm
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