Distribution and Characterization of Iron in Implanted Silicon Carbide

Analytical electron microscopy (AEM) and Rutherford backscattering spectroscopy-ion channeling (RBS-C) have been used to characterize single crystal 6h-silicon carbide implanted at room temperature with 160 keV 57Fe ions to fluences of 1, 3, and 6 x 1016 ions/cm2. Best correlations among AEM, RBS, and TRIM calculations were obtained assuming a density of the amorphized implanted regions equal to that of crystalline SiC. No iron-rich precipitates or clusters were detected by AEM. Inspection of the electron energy loss fine structure for iron in the implanted specimens suggests that the iron is not metallically-bonded, supporting conclusions from earlier conversion electron Mössbauer spectroscopy (CEMS) studies. In-situ annealing surprisingly resulted in crystallization at 600°C with some redistribution of the implanted iron.