Process Hj: A 30 Ghz Npn And 20 Ghz Pnp Complementary Bipolar Process For High Linearity Rf Circuits.
PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING(1998)
摘要
This paper describes "Process HJ" a new high speed, low power complementary bipolar technology suitable for RF applications, which features high frequency NPN and PNP transistors of 30GHz and 20GHz, respectively. The technology uses fully isolated double polysilicon self-aligned architecture and 0.6 mu m emitters. Resistors, capacitors, inductors and 3 levels of metallisation are also incorporated.
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关键词
inductors,linearity,mobile communication,radio frequency,resistors,capacitors,high frequency,metallization,circuits
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