Current Conduction Processes In High-Kappa Gd0.31ga0.1o0.59/Ga2o3 Gate Dielectric Stacks On Gaas

Current conduction processes in high-kappa (kappa = 20.2) Gd0.31Ga0.1O0.59/Ga2O3 dielectric stacks grown on n-type GaAs by molecular beam epitaxy have been investigated. Metal-oxide-semiconductor capacitors have been characterized by current density (j) versus electric field (E) measurements at temperatures ranging from 90 to 450 K. For temperatures Tless than or equal to200 K, the high field. (4.5less than or equal toE less than or equal to6.2 MV/cm) current is temperature independent and a Fowler-Nordheim tunneling slope of 1.75 eV(3/2) is obtained. Frenkel-Poole emission is found to dominate at temperatures of 300 K and above at moderate electric fields (1.3less than or equal toEless than or equal to2.2 MV/cm). For Frenkel-Poole emission, a barrier height of 1.1 eV and a dynamic dielectric constant of 7.95 is derived from ln(j/E) vs 1/T and ln(j/E) vs E-1/2 plots, respectively. C) 2004 American Institute of Physics.