Formation Of Silicides In A Cavity Applicator Microwave System

APPLIED PHYSICS LETTERS(2003)

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摘要
Metal silicides of nickel and cobalt are formed in a cavity applicator microwave system with a magnetron power of 1200 W and a frequency of 2.45 GHz. X-ray diffraction, Rutherford backscattering spectrometry, and four-point-probe measurements are used to identify the silicide phase present and layer thicknesses. Additional processing confirmed that the products attained from heating by microwaves do not differ appreciably from those attained in heating by thermal processes. Materials properties are used to explain microwave power absorption and demonstrate how to tailor a robust process in which thin film reactions can be attained and specific products isolated. (C) 2003 American Institute of Physics.
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关键词
material properties,chemical analysis,thin film,semiconductor devices,x ray diffraction,nickel
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