Orientation Dependent Emission Properties Of Columnar Quantum Dash Laser Structures

APPLIED PHYSICS LETTERS(2009)

Cited 13|Views5
No score
Abstract
InAs columnar quantum dash (CQDash) structures on (100) InP have been realized by gas source molecular beam epitaxy for stacking numbers of up to 24. Laser devices show low threshold current densities between 0.73 and 3.5 kA/cm(2), dependent on the CQDash orientation within the cavity. Photoluminescence and electroluminescence measurements confirm a strong relationship between the polarization degree of the emission and the orientation of the CQDashes. Eventually, the polarization of the CQDash emission could be changed from predominantly transverse electric to transverse magnetic by simply altering the dash alignment relative to the light propagation axis.
More
Translated text
Key words
electroluminescence, III-V semiconductors, indium compounds, laser beams, laser cavity resonators, molecular beam epitaxial growth, photoluminescence, quantum dash lasers, semiconductor growth
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined