Stepped-Gate-Oxide Structure - A New Approach For Speed Enhancement In The Gate-Controlled Photodetector
APPLIED PHYSICS LETTERS(1989)
摘要
In this letter, we report a stepped-gate-oxide structure implemented in the gate-controlled photodetector. The experimental results show that a one-order-of-magnitude enhancement in the response speed can be achieved by the use of such a structure owing to the induced transverse electrical field.
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关键词
speed enhancement
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