Current Induced Effective Magnetic Field And Magnetization Reversal In Uniaxial Anisotropy (Ga,Mn)As

APPLIED PHYSICS LETTERS(2010)

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摘要
The authors investigate the current density and temperature dependence of current induced effective magnetic field H(eff) through spin-orbit interaction in a ferromagnetic semiconductor Ga(0.92)Mn(0.08)As having uniaxial magnetic anisotropy. The change of the magnitude of apparent magnetic anisotropy induced by H(eff) that is dependent on the current direction and density is observed by transport measurements using the planar Hall effect. The authors show the 180 degrees magnetization switching through H(eff) by applying pulsed current. (C) 2010 American Institute of Physics. [doi:10.1063/1.3520514]
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关键词
magnetic semiconductor,gallium arsenide,magnetic anisotropy,spin orbit interaction,spin orbit coupling,magnetic field,hall effect,current density,jahn teller
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