Observation Of Capacitive Modulation Of Bipolar Current In Crystalline Silicon Gated P-I-N Structures
APPLIED PHYSICS LETTERS(1989)
摘要
We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p-i-n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are compared.
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关键词
microstructures,bipolar transistor,energy gap
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