Molecular-Beam Epitaxial-Growth Of Ultrathin Cdte-Cdmnte Quantum-Wells And Their Characterization
APPLIED PHYSICS LETTERS(1991)
Abstract
We report the growth and optical characterization of CdTe/CdMnTe single quantum wells with well thicknesses ranging from 60 down to 6 angstrom. The single quantum wells were grown by standard molecular beam epitaxy without growth interruption and investigated by reflection, photoluminescence (PL), and excitation PL. All structures including the 6-angstrom-thick quantum well exhibit extraordinarily narrow photoluminescence lines. From an analysis of linewidth and Stokes shift of the photoluminescence lines informations on the structure of the CdTe/CdMnTe interfaces are derived. The good quality of those structures made it possible to identify for the first time recombination of two-dimensional free exciton magnetic polarons.
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Key words
molecular beam epitaxy,cadmium telluride,quantum well
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