Electron Tunneling Spectroscopy Study Of Electrically Active Traps In Algan/Gan High Electron Mobility Transistors
APPLIED PHYSICS LETTERS(2013)
Abstract
We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier. (C) 2013 AIP Publishing LLC.
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Key words
algan/gan,algan/gan,tunneling,active traps
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