Relation Between Size Dispersion And Line Shape In Quantum Dot Ensembles
APPLIED PHYSICS LETTERS(2009)
摘要
We propose a method to model the density of optical transitions, absorption, and differential-absorption spectra of quantum dot ensembles. The developed approach combines physical straightforwardness of the conventional Gaussian-peak modeling with a more preside account of the influence of size dispersion on the line shape of quantum dots.
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关键词
gallium arsenide, III-V semiconductors, indium compounds, semiconductor quantum dots, Stark effect
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