Tunable Topological Electronic Structures In Sb(111) Bilayers: A First-Principles Study

APPLIED PHYSICS LETTERS(2013)

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摘要
Electronic structures and band topology of a single Sb(111) bilayer in the buckled honeycomb configuration are investigated using first-principles calculations. A nontrivial topological insulating phase can be induced by tensile strain, indicating the possibility of realizing the quantum spin Hall state for Sb thin films on suitable substrates. The presence of buckling provides an advantage in controlling the band gap through an out-of-plane external electric field, making a topological phase transition with six spin-polarized Dirac cones at the critical point. With a tunable gap and reversible spin polarization, Sb thin films are promising candidates for spintronic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776734]
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关键词
Topological Insulators,Photonic Topological Insulators
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