Modified Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) Source/Drain Electrodes For Fully Printed Organic Field-Effect Transistors Consisting Of A Semiconductor Blend
APPLIED PHYSICS LETTERS(2013)
摘要
The influence of post-press treatment on the modification of printed source/drain electrodes made of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with ethylene glycol is presented. Beside changes of the geometry and the conductivity of these mass printed structures, the work function of PEDOT: PSS can be tuned, leading to an improved performance of organic field effect transistors (OFETs). OFETs were built up with a new small molecule/polymer blend consisting of 6,13-bis[(cyclopropyldiisopropylsilyl)ethynyl] pentacene and poly(triarylamine), providing a field effect mobility of 0.2 cm(2)/Vs for fully printed devices in air. Ring oscillators based on these OFETs demonstrate a frequency of more than 1 kHz. (C) 2013 AIP Publishing LLC.
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关键词
source/drain electrodes,transistors,organic,field-effect
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