Low resistance Ohmic contact scheme (∼μΩ cm2) to p-InP

A low resistance Pd/Sb/Zn/Pd Ohmic contact based on the solid phase regrowth principle has been investigated to p-InP. Contact resistivity as low as ∼2×10−6 Ω cm2 has been obtained for samples annealed at 500 °C for 1 min. The Ohmic behavior can be rationalized by the formation of a heavily doped surface layer or a heterojunction. The InSb phase responsible for the observed low resistivity is identified using the x-ray diffraction technique.