Ptsi Dominated Schottky Barrier Heights Of Ni(Pt)Si Contacts Due To Pt Segregation

Temperature dependent current-voltage measurements show that the addition of only 10% Pt to NiSi causes an increase of Schottky barrier height (SBH) from 0.65 eV for NiSi to 0.78 eV for the 10% Pt alloy. Internal photoemission measurements resolve two SBHs in all alloyed samples with >= 5% Pt incorporation corresponding to NiSi and PtSi (similar to 0.68 eV and similar to 0.80 eV), proving that each contributes independently to junction current. High angle annular dark field imaging with scanning transmission electron microscopy confirms Pt segregation to the Ni(Pt)Si/Si interface. The resulting increased SBH may therefore be detrimental to contact resistivity in future technology nodes. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799277]