Domain Ordering Of Strained 5 Ml Srtio3 Films On Si(001)

APPLIED PHYSICS LETTERS(2007)

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摘要
High resolution x-ray diffraction data indicate ordered square shaped coherent domains, similar to 1200 angstrom in length, coexisting with longer, similar to 9500 angstrom correlated regions in highly strained 5 ML SrTiO3 films grown on Si(001). These long range film structures are due to the Si substrate terraces defined by the surface step morphology. The silicon surface "step pattern" is comprised of an "intrinsic" terrace length from strain relaxation and a longer "extrinsic" interstep distance due to the surface miscut. (C) 2007 American Institute of Physics.
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关键词
stress relaxation
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