Valence Band Offset Of Mgo/Inn Heterojunction Measured By X-Ray Photoelectron Spectroscopy
APPLIED PHYSICS LETTERS(2008)
Abstract
MgO may be a promising gate dielectric and surface passivation film for InN based devices and the valence band offset of MgO/InN heterojunction has been measured by x-ray photoelectron spectroscopy. The valence band offset is determined to be 1.59 +/- 0.23 eV. Given the experimental band gap of 7.83 for the MgO, a type-I heterojunction with a conduction band offset of 5.54 +/- 0.23 eV is found. The accurate determination of the valence and conduction band offsets is important for use of MgO/InN electronic devices. (c) 2008 American Institute of Physics.
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Key words
valence band,electron density,magnesium,band structure,band gap,x ray photoelectron spectroscopy,energy gap
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