Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer
Applied Physics A(2015)
摘要
In this work, the AlGaN/AlGaN superlattices (SLs) electron blocking layer (EBL) is designed to replace conventional AlGaN EBL in the AlGaN-based deep-UV light-emitting diodes (DUV-LEDs). The simulation results show that the DUV-LEDs with SLs possess higher emission power and internal quantum efficiency as compared to those with conventional EBL, which is attributed to the suppression of electron leakage and the enhancement of hole injection efficiency due to the alleviated strain force and the appropriately modified energy band caused by SLs EBL. The results also demonstrate that the efficiency droop is markedly reduced when the SLs EBL is adopted.
更多查看译文
关键词
External Quantum Efficiency, Hole Injection, Reference Structure, Internal Quantum Efficiency, Electron Leakage
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要