Platinum silicide formation on Si1−yCy epitaxial layers

Shengwei Lee,Hungtai Chang, Iping Lin,Kanrong Lee

Journal of Alloys and Compounds（2013）

引用 5|浏览4

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摘要

•This study first investigates the formation of Pt silicides on Si1−yCy epilayers.•The presence of C retards the growth but enhances the thermal stability of PtSi.•An interfacial oxide layer has no obviously negative impact on the Pt silicidation.•A mechanism is proposed to discuss these results in terms of C solubility in PtSi.•This work shows the potential of Pt silicides on epi-Si1yCy for device applications.

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关键词

Platinum silicide,Epitaxy,Sheet resistance,Phase transformation,Transmission electron microscopy

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