Carrier transport in porous-Si/Ni/c-Si nanostructures
Journal of Alloys and Compounds(2016)
摘要
In the present paper we have studied the peculiarities of carrier transport properties of nanoheterostructures containing silicon substrate covered with porous silicon layer, where pores were either filled or non-filled with ferromagnetic Ni clusters. We have carried out DC conductivity experiments as a function of temperature (ranging from 2 to 300 K) and porosity of porous silicon layer (between 30% and 70%). Presence of a surface layer with high resistance on the porous silicon top and its role in nanoheterostructure formation was revealed. It was shown that specific electrochemical kinetics of Ni deposition into porous silicon significantly influences resultant nanostructure resistance and high temperature conductance activation energy.
更多查看译文
关键词
Phase transitions in nanocrystalline materials,Electrical properties,Resistance measurement
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要