XAFS and XPS analysis of Zn0.98Fe0.02Te0.91Se0.09 semiconductor

•The structure of Zn0.98Fe0.02Te0.91Se0.09 crystal is highly locally distorted due to preferential paring of Fe–Se over Fe–Te and Zn–Se over Zn–Te.•Sample surface is covered with a thin oxide layer with most of the oxygen bound to Zn atoms.•Oxide formation facilitates breaking of the Zn–Te bonds at the surface and leaves the Zn–Se bonds intact.•Formation of a thin oxide layer at the surface makes a diffusion barrier which protects material from further oxidation.