X-Ray Investigation of the Degradation of Zn-Doped GaInAsP/InP Heterointerface

We report the results of crystal truncation rod study for the following heterostructure: GaInAsP layer grown on Zn-doped InP substrate. Two series of experiments have been performed within 4.5 years. The profiles of coherent (200) polarizability and lattice mismatch have been derived by fitting experimental diffraction intensity data. The comparison of these profiles for two series has shown essential enlargement of the distorted interface region with time. The obtained degradation length value 0.15 mu m is consistent with the estimations for the degradation spatial scale due to Zn-induced interdiffusion of In ions through the interface.