A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

F S Gard,J D Riley,R C G Leckey,B F Usher

SURFACE REVIEW AND LETTERS（2012）

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Abstract

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22-2.45 at a substrate temperature of 350degreesC on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

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Key words

molecular beam epitaxy,zinc selenide,gallium arsenide,RHEED,surface energy

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