Reliability Of An Al2o3/Sio2 Mim Capacitor For 180nm (3.3v) Technology

J. Gambino, D. Allman, G. Hall,D. Price, L. Sheng, R. Takada, Y. Kanuma

international reliability physics symposium（2019）

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摘要

Metal-Insulator-Metal (MIM) capacitors are widely used in More-than-Moore technologies, such as RF devices and image sensors. These technologies typically use SiN for the MIM capacitor dielectric, which has good reliability but a relatively low capacitance density. In this report we examine the reliability and performance tradeoffs for a MIM capacitors based on an Al2O3/SiO2 dielectrics.

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关键词

High-K Dielectric, Hysteresis, Linearity, Metal-Insulator-Metal Capacitor, Time Dependent Dielectric Breakdown

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