Undoped TiO2 and nitrogen-doped TiO2 thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A(2015)
摘要
Undoped and nitrogen doped TiO2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 degrees C and nitrogen incorporation was achieved by using titanium isopropoxide, NH3 and/or N2O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Omega cm (+/-10 Omega cm) combined with an average total transmittance of 60% in the 400-1000 nm wavelength range. Eventually, TiO2 thin films were deposited on the 3D metallic foam template. (C) 2014 American Vacuum Society.
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关键词
atomic layer deposition,photovoltaic,thin films,architectured surfaces,nitrogen-doped
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