THz Hot-Electron Micro-Bolometer Based on Low-Mobility 2-DEG in GaN Heterostructure

IEEE Sensors Journal(2013)

引用 18|浏览10
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摘要
We present the results on design, fabrication, and characterization of a hot-electron bolometer based on low-mobility 2-D electron gas (2-DEG) in an AlGaN/GaN heterostructure. The characterization of our hot-electron bolometers demonstrates that the following can be achieved simultaneously: 1) strong coupling to incident THz radiation due to strong Drude absorption; 2) significant THz heating of 2...
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关键词
MODFETs,HEMTs,Antennas,Couplings,Gallium nitride,Bolometers,Detectors
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